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C4D10120E - Silicon Carbide Schottky Diode

Datasheet Summary

Features

  • Package IF (TC=135˚C) = 16 A Qc = 52 nC.
  • 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF TO-252-2 Benefits.
  • Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel D.

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Datasheet Details

Part number C4D10120E
Manufacturer Cree
File Size 688.50 KB
Description Silicon Carbide Schottky Diode
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C4D10120E Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec™ Rectifier Features Package IF (TC=135˚C) = 16 A Qc = 52 nC • • • • • 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF TO-252-2 Benefits • • • • • Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 PIN 2 CASE Applications • • Solar Inverters Power Factor Correction Part Number C4D10120E Package TO-252-2 Marking C4D10120 Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter VRRM VRSM VDC IF IFRM IFSM Ptot Tc TJ Tstg R
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