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C4D10120D - Silicon Carbide Schottky Diode

Datasheet Summary

Features

  • Package VRRM  =  1200 V IF (TC=135˚C) = 18 A.
  • Qc  = 54 nC.
  • 1.2kV Schottky Rectifier.
  • Zero Reverse Recovery Current.
  • High-Frequency Operation.
  • Temperature-Independent Switching.
  • Extremely Fast Switching Benefits.
  • Replace Bipolar with Unipolar Rectifiers.
  • Essentially No Switching Losses.
  • Higher Efficiency.
  • Reduction of Heat Sink Requirements.
  • Parallel.

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Datasheet Details

Part number C4D10120D
Manufacturer Cree
File Size 836.22 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet C4D10120D Datasheet
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Full PDF Text Transcription

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C4D10120D Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package VRRM  =  1200 V IF (TC=135˚C) = 18 A** Qc  = 54 nC** • 1.
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