C4D10120D Datasheet
C4D10120D Datasheet (Wolfspeed)
Wolfspeed
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching.
* High-Frequency Operation
* Zero Reverse Recovery Current / Forward
Recovery Voltage
* Temperature-Independent Switching Behavior
* Parallel Devices Without Thermal Runaway
Typical Applications
* Boost Diodes in PFC or DC/DC Stages
* Free Wheeling Diodes in Inverter Stages
* Switch Mode Power Supp.
C4D10120D Datasheet (Cree)
Cree
C4D10120D Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package VRRM = 1200 V IF (TC=135˚C) = 18 A** Qc = 54 nC** • 1.2kV Schottky Rectifier • Zero.
Package
VRRM = 1200 V
IF (TC=135˚C) = 18 A**
Qc
= 54 nC**
* 1.2kV Schottky Rectifier
* Zero Reverse Recovery Current
* High-Frequency Operation
* Temperature-Independent Switching
* Extremely Fast Switching
Benefits
* Replace Bipolar with Unipolar Rectifier.