Datasheet Summary
1200 V, 120 A All-Silicon Carbide
High Performance, Switching Optimized, Half-Bridge Module
1200 V 120 A
Technical Features
- Industry Standard 62mm Footprint
- Ultra-Low Loss, High-Frequency Operation
- Zero Reverse Recovery from Diodes
- Zero Turn-off Tail Current from MOSFET
- Normally-off, Fail-safe Device Operation
- Copper Baseplate and Aluminum Nitride Insulator
Package 61.4 mm X 106.4 mm X 30 mm
Applications
- Railway & Traction
- Solar & Renewable Energy
- EV Charging
- Industrial Automation & Testing
System Benefits
- Fast Time-to-Market with Minimal Development Required for Transition from 62mm IGBT Packages
- Increased System Efficiency, due to...