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CAS120M12BM2 - All-Silicon Carbide Half-Bridge Module

Key Features

  • Industry Standard 62mm Footprint.
  • Ultra-Low Loss, High-Frequency Operation.
  • Zero Reverse Recovery from Diodes.
  • Zero Turn-off Tail Current from MOSFET.
  • Normally-off, Fail-safe Device Operation.
  • Copper Baseplate and Aluminum Nitride Insulator Package 61.4 mm X 106.4 mm X 30 mm.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDS CAS120M12BM2 IDS 1200 V, 120 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module 1200 V 120 A Technical Features • Industry Standard 62mm Footprint • Ultra-Low Loss, High-Frequency Operation • Zero Reverse Recovery from Diodes • Zero Turn-off Tail Current from MOSFET • Normally-off, Fail-safe Device Operation • Copper Baseplate and Aluminum Nitride Insulator Package 61.4 mm X 106.