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CAS120M12BM2
1200 V, 120 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module
Technical Features
• Industry Standard 62 mm Footprint • Ultra-Low Loss, High-Frequency Operation • Zero Reverse Recovery from Diodes • Zero Turn-off Tail Current from MOSFET • Normally-off, Fail-safe Device Operation • Copper Baseplate and Aluminum Nitride Insulator
VDS IDS
G1 K1
G2 K2
1200 V 120 A
V+
Mid
Applications
• Railway & Traction • Solar & Renewable Energy • EV Charging • Industrial Automation & Testing
V-
System Benefits
• Fast Time-to-Market with Minimal Development
Required for Transition from 62 mm IGBT Packages
• Increased System Efficiency, due to Low Switching &
Conduction Losses of SiC
Key Parameters
Parameter
Symbol Min. Typ. Max.