Datasheet Summary
1200 V, 120 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module
Technical Features
- Industry Standard 62 mm Footprint
- Ultra-Low Loss, High-Frequency Operation
- Zero Reverse Recovery from Diodes
- Zero Turn-off Tail Current from MOSFET
- Normally-off, Fail-safe Device Operation
- Copper Baseplate and Aluminum Nitride Insulator
VDS IDS
G1 K1
G2 K2
1200 V 120 A
V+
Mid
Applications
- Railway & Traction
- Solar & Renewable Energy
- EV Charging
- Industrial Automation & Testing
V-
System Benefits
- Fast Time-to-Market with Minimal Development
Required for Transition from 62 mm IGBT Packages
- Increased System Efficiency, due to Low Switching...
