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CAS120M12BM2 - 120A All-Silicon Carbide Half-Bridge Module

Key Features

  • Industry Standard 62 mm Footprint.
  • Ultra-Low Loss, High-Frequency Operation.
  • Zero Reverse Recovery from Diodes.
  • Zero Turn-off Tail Current from MOSFET.
  • Normally-off, Fail-safe Device Operation.
  • Copper Baseplate and Aluminum Nitride Insulator VDS IDS G1 K1 G2 K2 1200 V 120 A V+ Mid.

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Datasheet Details

Part number CAS120M12BM2
Manufacturer Wolfspeed
File Size 1.69 MB
Description 120A All-Silicon Carbide Half-Bridge Module
Datasheet download datasheet CAS120M12BM2 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CAS120M12BM2 1200 V, 120 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Technical Features • Industry Standard 62 mm Footprint • Ultra-Low Loss, High-Frequency Operation • Zero Reverse Recovery from Diodes • Zero Turn-off Tail Current from MOSFET • Normally-off, Fail-safe Device Operation • Copper Baseplate and Aluminum Nitride Insulator VDS IDS G1 K1 G2 K2 1200 V 120 A V+ Mid Applications • Railway & Traction • Solar & Renewable Energy • EV Charging • Industrial Automation & Testing V- System Benefits • Fast Time-to-Market with Minimal Development Required for Transition from 62 mm IGBT Packages • Increased System Efficiency, due to Low Switching & Conduction Losses of SiC Key Parameters Parameter Symbol Min. Typ. Max.