Datasheet Summary
1.2kV, 4.2 mΩ All-Silicon Carbide
Half-Bridge Module
C2M MOSFET and Z-RecTM Diode
VDS1.2 kV
Esw, Total @ 300A
12 mJ
RDS(on)
4.2 mΩ
Features
- Ultra Low Loss
- High-Frequency Operation
- Zero Reverse Recovery Current from Diode
- Zero Turn-off Tail Current from MOSFET
- Normally-off, Fail-safe Device Operation
- Ease of Paralleling
- Copper Baseplate and Aluminum Nitride Insulator
System Benefits
- Enables pact and Lightweight Systems
- High Efficiency Operation
- Mitigates Over-voltage Protection
- Reduced Thermal Requirements
- Reduced System Cost
Applications
- Induction Heating
- Motor Drives
- Solar and Wind Inverters
- UPS and SMPS
-...
