CGH35015 Description
CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015 ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down, flange...
CGH35015 Key Features
- 3.9 GHz Operation
- 15 W Peak Power Capability
- 12 dB Small Signal Gain
- 2.0 W PAVE at < 2.0 % EVM
- 26 % Efficiency at 2 W Average Power
- WiMAX Fixed Access 802.16-2004 OFDM
- WiMAX Mobile Access 802.16e OFDMA
- May 2015