Overview: PRELIMINARY
CGH35015F
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015F ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is available in a www.DataSheet4U.com flange package. Package Type : 440166 PN: CGH3501 5F Typical Performance 3.4-3.9GHz (TC = 25˚C) Parameter Gain @ POUT = 2 W POUT @ 2.0 % EVM Drain Efficiency @ 2.0 % EVM Input Return Loss 3.4 GHz 11.6 33.0 23.0 4.0 3.5 GHz 11.8 33.0 23.0 4.5 3.6 GHz 12.0 33.0 24.0 6.0 3.8 GHz 11.8 33.5 18.0 13.0 3.9 GHz 11.2 33.5 17.0 9.0 Units dB dBm % dB Note: Measured in the CGH35015F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
