CGH35015F Description
PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015F ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is available in a.
CGH35015F Key Features
- Subject to change without notice. .cree./wireless