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CGHV27015S - GaN HEMT

General Description

R1 R2 R3, R4 C1, C4 C2 C3 C8 C13 RES, 332,OHM, +/- 1%, Vishay RES, 22.6,OHM, +/- 1%, 1/16W, 0603 RES, 2.2,OHM, +/- 1%, 1/16W, 0603 CAP, 27pF, +/- 5%, 0603, ATC CAP, 2.0pF,+/-0.1pF, 0603 ATC CAP, 0.1pF,+/-0.05 pF, 0603, ATC CAP, 6.2pF, +/-0.1pF, 0603, ATC CAP, 10pF +/-5%, 0603, ATC C6, C11 CAP, 3

Key Features

  • for 50 V in CGHV27015S-AMP1.
  • 2.4 - 2.7 GHz Operation.
  • 15 W Typical Output Power.
  • 21 dB Gain at 2.5 W PAVE.
  • -38 dBc ACLR at 2.5 W PAVE.
  • 32% efficiency at 2.5 W PAVE.
  • High degree of APD and DPD correction can be applied Rev 2.0.
  • May 2015 Subject to change without notice. www. cree. com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Notes Drain-Source Voltage Gate.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGHV27015S GaN HEMT device is unmatched so it is suitable for power amplifier applications from 10MHz through 6000 MHz, such as tactical communications, CATV, UAV data links, as well as a driver stage amplifier for RADAR, EW, and SatCom devices. At a Vdd of 50 V, the device provide 2.5W of average power or 15W of peak power. At a Vdd of 28V, the device provides 1S of average power and 7W of peak power.