Overview: CGHV27015S
15 W, DC - 6.0 GHz, 50 V, GaN HEMT Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGHV27015S GaN HEMT device is unmatched so it is suitable for power amplifier applications from 10MHz through 6000 MHz, such as tactical communications, CATV, UAV data links, as well as a driver stage amplifier for RADAR, EW, and SatCom devices. At a Vdd of 50 V, the device provide 2.5W of average power or 15W of peak power. At a Vdd of 28V, the device provides 1S of average power and 7W of peak power. The transistor is available in a 3mm x 4mm, surface mount, duPaalc-fklaaPtg-Ne:TCyGpHe:V32x740D1F5NS no-lead (DFN) package. Typical Performance 2.4-2.7 GHz (TC = 25˚C) , 50 V Parameter 2.4 GHz Small Signal Gain 23 Adjacent Channel Power @ POUT = 2.5 W Drain Efficiency @ POUT = 2.5 W Input Return Loss -36.7 35.9 -9.312 2.5 GHz 22
-40.7 33.5 -9.6 Note: Measured in the CGHV27015S-AMP1 application circuit. Under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH. 2.6 GHz 21.7 -42.4 30.4 -8.6 2.7 GHz 21.2 -42.5 30.2 -7.
