CGHV27015S Description
CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Tele and BWA amplifier applications. The CGHV27015S GaN HEMT device is unmatched so it is suitable for power amplifier applications from 10MHz...
CGHV27015S Key Features
- 2.7 GHz Operation
- 15 W Typical Output Power
- 21 dB Gain at 2.5 W PAVE
- 38 dBc ACLR at 2.5 W PAVE
- 32% efficiency at 2.5 W PAVE
- High degree of APD and DPD correction can be applied
- May 2015