Datasheet Summary
15 W, DC
- 6.0 GHz, 50 V, GaN HEMT
Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Tele and BWA amplifier applications. The
CGHV27015S GaN HEMT device is unmatched so it is suitable for power amplifier applications from 10MHz through 6000 MHz, such as tactical munications, CATV, UAV data links, as well as a driver stage amplifier for RADAR, EW, and Sat devices. At a Vdd of 50 V, the device provide 2.5W of average power or 15W of peak power. At a Vdd of 28V, the device provides 1S of...
