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CGHV27015S - GaN HEMT

General Description

Wolfspeed’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications.

Key Features

  • for 50 V in CGHV27015S-AMP1.
  • 2.4 - 2.7 GHz Operation.
  • 15 W Typical Output Power.
  • 21 dB Gain at 2.5 W PAVE.
  • -38 dBc ACLR at 2.5 W PAVE.
  • 32% efficiency at 2.5 W PAVE.
  • High degree of APD and DPD correction can be applied Large Signal Models Available for ADS and MWO Rev. 4.0, 2022-8-3 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered tra.

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Full PDF Text Transcription (Reference)

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CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Description Wolfspeed’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGHV27015S GaN HEMT device is unmatched so it is suitable for power amplifier applications from 10 MHz through 6000 MHz, such as tactical communications, CATV, UAV data links, as well as a driver stage amplifier for RADAR, EW, and SatCom devices. At a VDD of 50 V, the device provide 2.5 W of average power or 15 W of peak power. At a VDD of 28 V, the device provides 1 W of average power and 7 W of peak power.