CGHV40050 Description
CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications up to 4 GHz. The reference HPA design in the datasheet operates from 800 MHz to 2 GHz operation instantaneously.
CGHV40050 Key Features
- Up to 4 GHz Operation
- 77 W Typical Output Power
- 17.5 dB Small Signal Gain at 1.8 GHz
- Application Circuit for 0.8
- 2.0 GHz
- 53 % Efficiency at PSAT
- 50 V Operation
- July 2015