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CGHV40050 - GaN HEMT

General Description

The CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGHV40050, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications up to 4 GHz.

Key Features

  • Up to 4 GHz Operation.
  • 77 W Typical Output Power.
  • 17.5 dB Small Signal Gain at 1.8 GHz.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Description The CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications up to 4 GHz. The reference HPA design in the datasheet operates from 800 MHz to 2 GHz operation instantaneously. It is a demonstration amplifier to showcase the CGHV40050’s high efficiency, high gain and wide bandwidth capabilities. The device can be used for a range of applications from narrow band UHF, L and S Band as well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is available in a 2-lead flange and pill package.