CGHV60075D5 - GaN HEMT Die

Datasheet Summary

Features

19 dB Typical Small Signal Gain at 4 GHz.
17 dB Typical Small Signal Gain at 6 GHz.
65% Typical Power Added Efficiency at 4 GHz.
60% Typical Power Added Efficiency at 6 GHz.
75 W Typical PSAT.
50 V Operation.
High Breakdown Voltage.
Up to 6 GHz Operation.

Cree

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Datasheet Details

Part number	CGHV60075D5
Manufacturer	Cree
File Size	446.77 KB
Description	GaN HEMT Die
Datasheet	CGHV60075D5 Datasheet
Additional preview pages of the CGHV60075D5 datasheet.

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Full PDF Text Transcription

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CGHV60075D5 75 W, 6.0 GHz, GaN HEMT Die Cree’s CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

Published: Nov 3, 2016 |