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PRELIMINARY
CRF24010D
10 W SiC RF Power MESFET Die
Cree’s CRF24010 is a silicon carbide (SiC) RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. SiC MESFETs offer greater power density and wider bandwidths compared www.DataSheet4U.com to Si and GaAs transistors.
CRF24010D Datasheet
