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CRF24060 - SiC RF Power MESFET

Datasheet Summary

Features

  • 13 dB Small Signal Gain High Efficiency 50 W minimum P1dB Up to 2400 MHz Operation 48 V Operation High Breakdown Voltage High Temperature Operation.

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Datasheet preview – CRF24060

Datasheet Details

Part number CRF24060
Manufacturer Cree
File Size 798.27 KB
Description SiC RF Power MESFET
Datasheet download datasheet CRF24060 Datasheet
Additional preview pages of the CRF24060 datasheet.

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Full PDF Text Transcription

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PRELIMINARY CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide (SiC) RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. SiC MESFETs offer greater efficiency, greater power www.DataSheet4U.com density, and wider bandwidths compared to Si and GaAs transistors.
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