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CY14E256L Datasheet

Manufacturer: Cypress (now Infineon)
CY14E256L datasheet preview

Datasheet Details

Part number CY14E256L
Datasheet CY14E256L_CypressSemiconductor.pdf
File Size 836.38 KB
Manufacturer Cypress (now Infineon)
Description 256-Kbit (32K x 8) nvSRAM
CY14E256L page 2 CY14E256L page 3

CY14E256L Overview

The Cypress CY14E256L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM provides Infinite read and write cycles, while independent, nonvolatile data resides in the highly reliable QuantumTrap cell.

CY14E256L Key Features

  • 25 ns and 45 ns Access Times
  • STORE to QuantumTrap® Nonvolatile Elements is initiated by Software, Hardware or Autostore® on Power-down
  • RECALL to SRAM Initiated by Software or Power-up
  • Infinite READ, WRITE and RECALL Cycles
  • 15 mA Typical ICC at 200 ns Cycle Time
  • 1,000,000 STORE Cycles to QuantumTrap
  • 100-Year Data Retention to QuantumTrap
  • Single 5V Operation +10%
  • mercial Temperature
Cypress (now Infineon) logo - Manufacturer

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CY14E101I 1-Mbit (128 K x 8) Serial (I2C) nvSRAM
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CY14E116L 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM

CY14E256L Distributor

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