CY14E256LA Datasheet PDF - Cypress Semiconductor 256-Kbit nvSRAM Specs

CY14E256LA - 256-Kbit nvSRAM

Datasheet Summary

Description

The Cypress CY14E256LA is a fast static RAM, with a nonvolatile element in each memory cell.

The memory is organized as 32 KB.

Features

25 ns and 45 ns access times.
Internally organized as 32 K × 8 (CY14E256LA).
Hands-off automatic STORE on power-down with only a small capacitor.
STORE to QuantumTrap nonvolatile elements initiated by software, device pin, or autostore on power-down.
RECALL to SRAM initiated by software or power-up.
Infinite read, write, and RECALL cycles.
1 million STORE cycles to QuantumTrap.
20-year data retention.
Single 5 V + 10% operation.
Industrial tempe.

Datasheet Details

Part number	CY14E256LA
Manufacturer	Cypress Semiconductor
File Size	609.06 KB
Description	256-Kbit nvSRAM
Datasheet	CY14E256LA Datasheet
Additional preview pages of the CY14E256LA datasheet.

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Full PDF Text Transcription

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CY14E256LA 256-Kbit (32 K × 8) nvSRAM 256-Kbit (32 K × 8) nvSRAM Features ■ 25 ns and 45 ns access times ■ Internally organized as 32 K × 8 (CY14E256LA) ■ Hands-off automatic STORE on power-down with only a small capacitor ■ STORE to QuantumTrap nonvolatile elements initiated by software, device pin, or autostore on power-down ■ RECALL to SRAM initiated by software or power-up ■ Infinite read, write, and RECALL cycles ■ 1 million STORE cycles to QuantumTrap ■ 20-year data retention ■ Single 5 V + 10% operation ■ Industrial temperature ■ 44-pin thin small-outline package (TSOP) Type II and 32-pin small-outline integrated circuit (SOIC) package ■ Pb-free and restriction of hazardous substances (RoHS) compliant Functional Description The Cypress CY14E256LA is a fast static RAM, with a nonvo

Published: Mar 15, 2017 |