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CY62126ESL - 1-Mbit (64 K x 16) Static RAM

General Description

The CY62126ESL is a high performance CMOS static RAM organized as 64K words by 16 bits.

Key Features

  • Very high speed: 45 ns.
  • Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V.
  • Ultra low standby power.
  • Typical standby current: 1 A.
  • Maximum standby current: 4 A.
  • Ultra low active power.
  • Typical active current: 1.3 mA at f = 1 MHz.
  • Easy memory expansion with CE, and OE features.
  • Automatic power down when deselected.
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power.
  • Available in Pb-free 44-pin thin small outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY62126ESL MoBL® 1-Mbit (64 K × 16) Static RAM 1-Mbit (64 K × 16) Static RAM Features ■ Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 4 A ■ Ultra low active power ❐ Typical active current: 1.3 mA at f = 1 MHz ■ Easy memory expansion with CE, and OE features ■ Automatic power down when deselected ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Available in Pb-free 44-pin thin small outline package (TSOP) Type II package Functional Description The CY62126ESL is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current.