Datasheet4U Logo Datasheet4U.com

CY62136CV30 - 2-Mbit (128K x 16) Static RAM

Description

of read and write modes.

The CY62136CV30 is high-performance CMOS static RAM organized as 128K words by 16 bits.

Features

  • Very high speed.
  • 55 ns.
  • Voltage range.
  • 2.7V.
  • 3.3V.
  • Pin-compatible with the CY62136V.
  • Ultra-low active power.
  • Typical active current: 1.5 mA @ f = 1 MHz.
  • Typical active current: 7 mA @ f = fMax (55 ns speed).
  • Low standby power.
  • Easy memory expansion with CE and OE features.
  • Automatic power-down when deselected.
  • CMOS for optimum speed/power.
  • Available in Pb-free and non Pb.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CY62146DV30 4M Bit Static RAM Cypress
CY62146G 4-Mbit (256K words x 16 bit) Static RAM Cypress
CY62146G-MoBL 4-Mbit (256K words x 16 bit) Static RAM Cypress
CY62146GE 4-Mbit (256K words x 16 bit) Static RAM Cypress
CY62146GESL 4-Mbit (256K words x 16 bit) Static RAM Cypress

Other Datasheets by Cypress (Infineon)

Part Number Description
CY62136CV30 2M (128K x 16) Static RAM
CY62136CV33 2M (128K x 16) Static RAM
CY62136CV 2M (128K x 16) Static RAM
CY62136CV18 128K x 16 Static RAM
CY62136ESL 2 Mbit (128K x 16) Static RAM

Full PDF Text Transcription

Click to expand full text
CY62136CV30 MoBL® 2-Mbit (128K x 16) Static RAM Features • Very high speed — 55 ns • Voltage range — 2.7V – 3.3V • Pin-compatible with the CY62136V • Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz — Typical active current: 7 mA @ f = fMax (55 ns speed) • Low standby power • Easy memory expansion with CE and OE features • Automatic power-down when deselected • CMOS for optimum speed/power • Available in Pb-free and non Pb-free 48-ball VFBGA package This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling.
Published: |