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CY62136ESL - 2 Mbit (128K x 16) Static RAM

Description

of read and write modes.

For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.

The CY62136ESL is a high performance CMOS static RAM organized as 128K words by 16 bits.

Features

  • Very high speed: 45 ns Wide voltage range: 2.2V to 3.6V and 4.5V to 5.5V Ultra low standby power.
  • Typical standby current: 1 μA.
  • Maximum standby current: 7 μA Ultra low active power.
  • Typical active current: 2 mA at f = 1 MHz Easy memory expansion with CE and OE features Automatic power down when deselected CMOS for optimum speed and power Available in Pb-free 44-pin TSOP II package mode reduces power consumption by more than 99% when deselected (CE HIGH). The i.

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Full PDF Text Transcription

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CY62136ESL MoBL® 2 Mbit (128K x 16) Static RAM Features ■ ■ ■ Very high speed: 45 ns Wide voltage range: 2.2V to 3.6V and 4.5V to 5.5V Ultra low standby power ❐ Typical standby current: 1 μA ❐ Maximum standby current: 7 μA Ultra low active power ❐ Typical active current: 2 mA at f = 1 MHz Easy memory expansion with CE and OE features Automatic power down when deselected CMOS for optimum speed and power Available in Pb-free 44-pin TSOP II package mode reduces power consumption by more than 99% when deselected (CE HIGH).
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