CY62136VN Datasheet | Cypress

CY62136VN Mo BL® 2-Mbit (128K x 16) Static RAM Features - Temperature Ranges - Industrial: - 40°C to 85°C - Automotive-A: - 40°C to 85°C - Automotive-E: - 40°C to 125°C - High speed: 55 ns - Wide voltage range: 2.7V- 3.6V - Ultra-low active, standby power - Easy memory expansion with CE and OE Features - TTL-patible inputs and outputs - Automatic power-down when deselected - CMOS for optimum speed/power - Available in standard Pb-free 44-pin TSOP Type II, Pb-free and non Pb-free 48-ball FBGA packages portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). Writing to the device is acplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A16). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A16). Reading from the device is acplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the Truth Table at the back of this data sheet for a plete description of read and write modes. Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device Features...