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CY62256V - 32K x 8 Static RAM

This page provides the datasheet information for the CY62256V, a member of the CY6 32K x 8 Static RAM family.

Datasheet Summary

Description

The CY62256V is a high-performance CMOS static RAM organized as 32,768 words by 8 bits.

Features

  • 55, 70 ns access time CMOS for optimum speed/power Wide voltage range: 2.7V.
  • 3.6V Low active power (70 ns, LL version).
  • 108 mW (max. ) Low standby power (70 ns, LL version).
  • 18 µW (max. ) Easy memory expansion with CE and OE features TTL-compatible inputs and outputs Automatic power-down when deselected LOW output enable (OE) and three-state drivers. This device has an automatic power-down feat.

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Datasheet preview – CY62256V

Datasheet Details

Part number CY62256V
Manufacturer Cypress Semiconductor
File Size 316.03 KB
Description 32K x 8 Static RAM
Datasheet download datasheet CY62256V Datasheet
Additional preview pages of the CY62256V datasheet.

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Full PDF Text Transcription

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1CY 622 56 V fax id: 1069 PRELIMINARY CY62256V 32K x 8 Static RAM Features • • • • • • • • 55, 70 ns access time CMOS for optimum speed/power Wide voltage range: 2.7V−3.6V Low active power (70 ns, LL version) — 108 mW (max.) Low standby power (70 ns, LL version) — 18 µW (max.) Easy memory expansion with CE and OE features TTL-compatible inputs and outputs Automatic power-down when deselected LOW output enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 98% when deselected. The CY62256V is in the standard 450-mil-wide (300-mil body width) SOIC, TSOP, and reverse TSOP packages. An active LOW write enable signal (WE) controls the writing/reading operation of the memory.
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