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CY62256V - 32K x 8 Static RAM

Download the CY62256V datasheet PDF. This datasheet also covers the CY6 variant, as both devices belong to the same 32k x 8 static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The CY62256V is a high-performance CMOS static RAM organized as 32,768 words by 8 bits.

Key Features

  • 55, 70 ns access time CMOS for optimum speed/power Wide voltage range: 2.7V.
  • 3.6V Low active power (70 ns, LL version).
  • 108 mW (max. ) Low standby power (70 ns, LL version).
  • 18 µW (max. ) Easy memory expansion with CE and OE features TTL-compatible inputs and outputs Automatic power-down when deselected LOW output enable (OE) and three-state drivers. This device has an automatic power-down feat.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY6-2256V.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
CY62256 256K (32K x 8) Static RAM ART CHIP
CY62146DV30 4M Bit Static RAM Cypress
CY62146G 4-Mbit (256K words x 16 bit) Static RAM Cypress
CY62146G-MoBL 4-Mbit (256K words x 16 bit) Static RAM Cypress
CY62146GE 4-Mbit (256K words x 16 bit) Static RAM Cypress

Other Datasheets by Cypress (now Infineon)

Part Number Description
CY62256VN 256K (32K x 8) Static RAM
CY62256 256K (32K x 8) Static RAM
CY62256EV18 256-Kbit (32 K x 8) Static RAM
CY62256N 256-Kbit (32 K x 8) Static RAM
CY62126ESL 1-Mbit (64 K x 16) Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1CY 622 56 V fax id: 1069 PRELIMINARY CY62256V 32K x 8 Static RAM Features • • • • • • • • 55, 70 ns access time CMOS for optimum speed/power Wide voltage range: 2.7V−3.6V Low active power (70 ns, LL version) — 108 mW (max.) Low standby power (70 ns, LL version) — 18 µW (max.) Easy memory expansion with CE and OE features TTL-compatible inputs and outputs Automatic power-down when deselected LOW output enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 98% when deselected. The CY62256V is in the standard 450-mil-wide (300-mil body width) SOIC, TSOP, and reverse TSOP packages. An active LOW write enable signal (WE) controls the writing/reading operation of the memory.