CY7C1150KV18 Description
CY7C1148KV18/CY7C1150KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) 18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency).
CY7C1150KV18 Key Features
- 18-Mbit density (1M × 18, 512K × 36)
- 450-MHz clock for high bandwidth
- Two-word burst for reducing address bus frequency
- Double data rate (DDR) interfaces (data transferred at
- Available in 2.0 clock cycle latency
- Two input clocks (K and K) for precise DDR timing
- SRAM uses rising edges only
- Echo clocks (CQ and CQ) simplify data capture in high-speed
- Data valid pin (QVLD) to indicate valid data on the output
- Synchronous internally self-timed writes