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CY7C1316JV18

Manufacturer: Cypress (now Infineon)

CY7C1316JV18 datasheet by Cypress (now Infineon).

CY7C1316JV18 datasheet preview

CY7C1316JV18 Datasheet Details

Part number CY7C1316JV18
Datasheet CY7C1316JV18_CypressSemiconductor.pdf
File Size 660.79 KB
Manufacturer Cypress (now Infineon)
Description 18-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1316JV18 page 2 CY7C1316JV18 page 3

CY7C1316JV18 Overview

The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K.

CY7C1316JV18 Key Features

  • 2M x 8 CY7C1916JV18
  • 2M x 9 CY7C1318JV18
  • 1M x 18 CY7C1320JV18
  • 512K x 36
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CY7C1311AV18 (CY7C131xAV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
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CY7C1311CV18 (CY7C1x1xCV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
CY7C1311JV18 (CY7C1x1xJV18) 18-Mbit QDR II SRAM 4-Word Burst Architecture

CY7C1316JV18 Distributor

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