CY7C1380BV25 Description
The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. All synchronous inputs are gated by registers controlled by a positive-edge-triggered clock input Selection Guide 200 MHz Maximum Access Time (ns) Maximum Operating Current (mA) Maximum CMOS Standby Current (mA)...
CY7C1380BV25 Key Features
- Automatic power-down for portable