CY7C1380BV25 - 512K x 36 / 1 Mb x 18 Pipelined SRAM

This page provides the datasheet information for the CY7C1380BV25, a member of the CY7 512K x 36 / 1 Mb x 18 Pipelined SRAM family.

Product Overview

Cypress Semiconductor

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Datasheet Details

Part number	CY7C1380BV25
Manufacturer	Cypress Semiconductor
File Size	Direct Link
Description	512K x 36 / 1 Mb x 18 Pipelined SRAM
Datasheet	CY7C1380BV25 Datasheet
Additional preview pages of the CY7C1380BV25 datasheet.

CY7C1380BV25 Product details

Description

The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology.

Each memory cell consists of six transistors.

Features

Fast clock speed: 200,166, 150, 133 MHz Provide high-performance 3-1-1-1 access rate Fast OE access times: 3.0,3.2, 3.4, 3.8, 4.2 ns Optimal for depth expansion 2.5V (±5%) Operation Common data inputs and data outputs Byte Write Enable and Global Write control Chip enable for address pipeline Address, data, and control registers Internally self-timed WRITE CYCLE Burst control pins (inter.

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Other Datasheets by Cypress Semiconductor

CY7C1380C - 18-Mb (512K x 36/1M x 18) Pipelined SRAM
CY7C1380CV25 - (CY7C1380CV25 / CY7C1382CV25) 512K x 36/1M x 18 Pipelined SRAM
CY7C1380D - 18-Mbit Pipelined SRAM
CY7C1380DV33 - 18-Mbit Pipelined SRAM
CY7C1380F - 18-Mbit Pipelined SRAM
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CY7C138 - 4K x 8/9 Dual-Port Static RAM
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Published: Mar 27, 2005 |