CY7C1382BV25 Description
The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. The CY7C1382BV25 and CY7C1380BV25 SRAMs integrate 1,048,576x18.
CY7C1382BV25 Key Features
- Fast clock speed: 200,166, 150, 133 MHz
- Provide high-performance 3-1-1-1 access rate
- Fast OE access times: 3.0,3.2, 3.4, 3.8, 4.2 ns
- Optimal for depth expansion
- 2.5V (±5%) Operation
- mon data inputs and data outputs
- Byte Write Enable and Global Write control
- Chip enable for address pipeline
- Address, data, and control registers
- Internally self-timed WRITE CYCLE