Datasheet4U Logo Datasheet4U.com

CY7C164 - 16K x 4 Static RAM

This page provides the datasheet information for the CY7C164, a member of the CY7 16K x 4 Static RAM family.

Datasheet Summary

Description

The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits.

Features

  • High speed.
  • 15 ns.
  • Output enable (OE) feature (CY7C166).
  • CMOS for optimum speed/power.
  • Low active power.
  • 633 mW.
  • Low standby power.
  • 110 mW.
  • TTL-compatible inputs and outputs.
  • Automatic power-down when deselected three-state drivers. The CY7C166 has an active LOW Output Enable (OE) feature. Both devices have an automatic powerdown feature, reducing the power consumption by 65% when deselected. Writing to th.

📥 Download Datasheet

Datasheet preview – CY7C164

Datasheet Details

Part number CY7C164
Manufacturer Cypress Semiconductor
File Size 171.24 KB
Description 16K x 4 Static RAM
Datasheet download datasheet CY7C164 Datasheet
Additional preview pages of the CY7C164 datasheet.

📁 Similar Datasheet

  • CY7C1006D - 1-Mbit (256K x 4) Static RAM (Cypress)
  • CY7C1011G - 2-Mbit (128K words x 16 bit) Static RAM (Cypress)
  • CY7C1041G - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
  • CY7C1041GE - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
  • CY7C1041GN - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
  • CY7C1049GN - 4-Mbit (512K words x 8 bit) Static RAM (Cypress)
  • CY7C1061DV33 - 16-Mbit (1 M X 16) Static RAM (Cypress)
  • CY7C1061G - 16-Mbit (1 M words x 16 bit) Static RAM (Cypress)
  • CY7C106D - 1-Mbit (256K x 4) Static RAM (Cypress)
  • CY7C131AE - 1K/2K x 8 Dual-Port Static RAM (Cypress)
Other Datasheets by Cypress Semiconductor
  • CY7C1643KV18 - 144-Mbit QDR II+ SRAM Four-Word Burst Architecture
  • CY7C1645KV18 - 144-Mbit QDR II+ SRAM Four-Word Burst Architecture
  • CY7C1648KV18 - 144-Mbit DDR II+ SRAM Two-Word Burst Architecture
  • CY7C1612KV18 - 144-Mbit QDR II SRAM Two-Word Burst Architecture
  • CY7C1613KV18 - 144-Mbit QDR II SRAM Four-Word Burst Architecture
  • CY7C1614KV18 - 144-Mbit QDR II SRAM Two-Word Burst Architecture
  • CY7C1615KV18 - 144-Mbit QDR II SRAM Four-Word Burst Architecture
  • CY7C1618KV18 - 144-Mbit DDR II SRAM Two-Word Burst Architecture

Full PDF Text Transcription

Click to expand full text
66 CY7C164 CY7C166 16K x 4 Static RAM Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW • TTL-compatible inputs and outputs • Automatic power-down when deselected three-state drivers. The CY7C166 has an active LOW Output Enable (OE) feature. Both devices have an automatic powerdown feature, reducing the power consumption by 65% when deselected. Writing to the device is accomplished when the Chip Enable (CE) and Write Enable (WE) inputs are both LOW (and the Output Enable (OE) is LOW for the CY7C166). Data on the four input/output pins (I/O0 through I/O3) is written into the memory location specified on the address pins (A0 through A13).
Published: |