CY7C1911KV18 Description
CY7C1311KV18/CY7C1911KV18 CY7C1313KV18/CY7C1315KV18 18-Mbit QDR® II SRAM Four-Word Burst Architecture 18-Mbit QDR® II SRAM Four-Word Burst.
CY7C1911KV18 Key Features
- Separate independent read and write data ports
- Supports concurrent transactions
- 333-MHz clock for high bandwidth
- Four-word burst for reducing address bus frequency
- Double data rate (DDR) interfaces on both read and write ports
- Two input clocks (K and K) for precise DDR timing
- SRAM uses rising edges only
- Two Input Clocks for Output Data (C and C) to minimize Clock
- Echo clocks (CQ and CQ) simplify data capture in high speed
- Single multiplexed address input bus latches address inputs