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CY7C199 Datasheet 32k X 8 Static Ram

Manufacturer: Cypress (now Infineon)

Overview: CY7C199 32K x 8 Static RAM.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The CY7C199 is a high-performance CMOS static RAM organized as 32,768 words by 8 bits.

Easy memory expansion Logic Block Diagram Pin Configurations DIP / SOJ / SOIC Top View A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 22 23 24 25 26 27 28 1 2 3 4 5 6 7 LCC Top View 3 2 1 28 27 4 26 A4 5 25 A3 6 24 A2 7 23 A1 8 22 OE 9 21 A0 20 CE 10 11 19 I/O7 18 I/O6 12 1314151617 I/O2 GND I/O3 I/O4 I/O5 A7 A6 A5 VCC WE A8 A9 A10 A11 A12 A13 A14 I/O0 I/O1 I/O0 INPUT BUFFER A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 CE WE OE I/O1 ROW DEC

Key Features

  • High speed.
  • 10 ns.
  • Fast tDOE.
  • CMOS for optimum speed/power.
  • Low active power.
  • 467 mW (max, 12 ns “L” version).
  • Low standby power.
  • 0.275 mW (max, “L” version).
  • 2V data retention (“L” version only).
  • Easy memory expansion with CE and OE features.
  • TTL-compatible inputs and outputs.
  • Automatic power-down when deselected is provided by an active LOW Chip Enable (CE) and active LOW Output Enable.

More Datasheets from Cypress (now Infineon)

Part Number Description
CY7C1992BV18 1.8V Synchronous Pipelined SRAM
CY7C199C 32K x 8 Static RAM
CY7C199D 256K (32K x 8) Static RAM
CY7C199N 32K x 8 Static RAM
CY7C190 (CY7C190 / CY7C189) 16 x 4 Static R/W RAM
CY7C1910BV18 1.8V Synchronous Pipelined SRAM
CY7C1911BV18 (CY7C1x1xBV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
CY7C1911CV18 (CY7C1x1xCV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
CY7C1911JV18 (CY7C1x1xJV18) 18-Mbit QDR II SRAM 4-Word Burst Architecture
CY7C1911KV18 18-Mbit QDR II SRAM Four-Word Burst Architecture

CY7C199 Distributor