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CY7C197 - 256Kx1 Static RAM

General Description

The CY7C197 is a high-performance CMOS static RAM organized as 256K words by 1 bit.

Key Features

  • High speed.
  • 12 ns.
  • CMOS for optimum speed/power.
  • Low active power.
  • 880 mW.
  • Low standby power.
  • 220 mW.
  • TTL-compatible inputs and outputs.
  • Automatic power-down when deselected vided by an active LOW Chip Enable (CE) and three-state drivers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. Writing to the device is accomplished when the Chip Enable (CE) and Write E.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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97 CY7C197 256Kx1 Static RAM Features • High speed — 12 ns • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs • Automatic power-down when deselected vided by an active LOW Chip Enable (CE) and three-state drivers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. Writing to the device is accomplished when the Chip Enable (CE) and Write Enable (WE) inputs are both LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A17). Reading the device is accomplished by taking chip enable (CE) LOW while Write Enable (WE) remains HIGH.