CY9C62256 Overview
The CY9C62256 is a high-performance CMOS nonvolatile RAM employing an advanced magnetic RAM (MRAM) process. An MRAM is nonvolatile memory that operates as a RAM. It provides data retention for more than 10 years while eliminating the reliability concerns, functional disadvantages and system design plexities of battery-backed SRAM, EEPROM, Flash and FeRAM.
CY9C62256 Key Features
- 100% Form, Fit, Function-patible with 32K × 8, micropower SRAM (CY62256)
- Fast Read and Write access: 70 ns
- Voltage range: 4.5V-5.5V operation
- Low active power: 495 mW (max.)
- Low standby power, CMOS: 825 µW (max.)
- Data retention current: 0 µA at VCC = 0V
- TTL-patible inputs and outputs
- Automatic power-down when deselected
- Replaces 32K × 8 Battery Backed (BB)SRAM, EEPROM, FeRAM or Flash memory
- Data is automatically protected during power loss
