CY9C62256 Overview
The CY9C62256 is a high-performance CMOS nonvolatile RAM employing an advanced magnetic RAM (MRAM) process. An MRAM is nonvolatile memory that operates as a fast read and write RAM. It provides data retention for more than ten years while eliminating the reliability concerns, functional disadvantages and system design plexities of battery-backed SRAM, EEPROM, Flash and FeRAM.
CY9C62256 Key Features
- 100% form, fit, function-patible with 32K × 8 micropower SRAM (CY62256)
- Fast Read and Write access: 70 ns
- Voltage range: 4.5V-5.5V operation
- Low power: 330 mW Active; 495 µW standby
- Easy memory expansion with CE and OE features
- TTL-patible inputs and outputs
- Automatic power-down when deselected
- Replaces 32K × 8 Battery Backed (BB)SRAM, SRAM, EEPROM, FeRAM or Flash memory
- Data is automatically Write protected during power loss
- Write Cycles Endurance: > 1015 cycles
