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CYK128K16MCCB - 2-Mbit (128K x 16) Pseudo Static RAM

Datasheet Summary

Description

of read and write modes.

Automatic power-down when deselected CMOS for optimum speed/power Offered in a 48-ball BGA Package Functional Description[1] The CYK128K16MCCB is a high-performance CMOS Pseudo Static RAM organized as 128K words by 16 bits that supports an asy

Features

  • Wide voltage range: 2.70V.
  • 3.30V.
  • Access Time: 55 ns, 70 ns.
  • Ultra-low active power.
  • Typical active current: 1mA @ f = 1 MHz.
  • Typical active current: 14 mA @ f = fmax (For 55-ns).
  • Typical active current: 8 mA @ f = fmax (For 70-ns).
  • Ultra low standby power www. DataSheet4U. com can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-im.

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Datasheet Details

Part number CYK128K16MCCB
Manufacturer Cypress Semiconductor
File Size 203.95 KB
Description 2-Mbit (128K x 16) Pseudo Static RAM
Datasheet download datasheet CYK128K16MCCB Datasheet
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CYK128K16MCCB 2-Mbit (128K x 16) Pseudo Static RAM Features • Wide voltage range: 2.70V–3.30V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: 1mA @ f = 1 MHz — Typical active current: 14 mA @ f = fmax (For 55-ns) — Typical active current: 8 mA @ f = fmax (For 70-ns) • Ultra low standby power www.DataSheet4U.com can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when the chip is deselected (CE HIGH), or when the outputs are disabled (OE HIGH), or when both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW).
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