Datasheet Summary
64-Kbit (8 K × 8) Wide Voltage Bytewide F-RAM Memory
64-Kbit (8 K × 8) Wide Voltage Bytewide F-RAM Memory
Features
- 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8
- High-endurance 100 trillion (1014) read/writes
- 151-year data retention (see the Data Retention and Endurance table)
- NoDelay™ writes
- Advanced high-reliability ferroelectric process
- SRAM and EEPROM patible
- Industry-standard 8 K × 8 SRAM and EEPROM pinout
- 70-ns access time, 130-ns cycle time
- Superior to battery-backed SRAM modules
- No battery concerns
- Monolithic reliability
- True surface mount solution, no rework steps
- Superior for moisture, shock, and vibration
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