Datasheet Summary
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Preliminary
64Kb Wide Voltage Bytewide F-RAM
Features
64Kbit Ferroelectric Nonvolatile RAM
- Organized as 8,192 x 8 bits
- High Endurance 100 Trillion (1014) Read/Writes
- 38 year Data Retention (@ +75C)
- NoDelay™ Writes
- Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules
- No Battery Concerns
- Monolithic Reliability
- True Surface Mount Solution, No Rework Steps
- Superior for Moisture, Shock, and Vibration
- Resistant to Negative Voltage Undershoots SRAM & EEPROM patible
- JEDEC 8Kx8 SRAM & EEPROM pinout
- 70 ns Access Time
- 130 ns Cycle Time Low Power Operation
- Wide Voltage Operation 2.7V to 5.5V
- 12 mA Active Current
- 20...
