Datasheet4U.com

FM18W08 - 256-Kbit (32 K x 8) Wide Voltage Bytewide F-RAM Memory

Product Overview

Cypress Semiconductor

📥 Download Datasheet

FM18W08 256-Kbit (32 K x 8) Wide Voltage Bytewide F-RAM Memory by Cypress Semiconductor - Datasheet Preview — Datasheet preview – FM18W08

Datasheet Details

Part number	FM18W08
Manufacturer	Cypress Semiconductor
File Size	307.47 KB
Description	256-Kbit (32 K x 8) Wide Voltage Bytewide F-RAM Memory
Datasheet	FM18W08 Datasheet
Additional preview pages of the FM18W08 datasheet.

Product details

Features

256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8.
High-endurance 100 trillion (1014) read/writes.
151-year data retention (see the Data Retention and Endurance table).
NoDelay™ writes.
Advanced high-reliability ferroelectric process.
SRAM and EEPROM compatible.
Industry-standard 32 K × 8 SRAM and EEPROM pinout.
70-ns access time, 130-ns cycle time.
Superior to battery-backed SRAM modules.
No battery concerns.

📁 Similar Datasheet

FM180 - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Rectron)
FM180-M - Silicon epitaxial planer type (Formosa MS)
FM180-MH - Chip Schottky Barrier Diodes (Formosa MS)
FM180-MS - SMD Schottky Barrier Rectifier (Formosa MS)
FM180-N - Chip Schottky Barrier Rectifier (PACELEADER INDUSTRIAL)
FM180-S - Chip Schottky Barrier Diodes (Formosa MS)
FM1800 - Constant current constant voltage IC (FUMAN)
FM1801 - Constant current constant voltage (FUMAN)

Other Datasheets by Cypress Semiconductor

FM1808B - 256-Kbit (32 K x 8) Bytewide F-RAM Memory
FM16W08 - 64-Kbit (8 K x 8) Wide Voltage Bytewide F-RAM Memory

Published: Mar 14, 2017 |