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FM18W08 - 256-Kbit (32 K x 8) Wide Voltage Bytewide F-RAM Memory

Key Features

  • 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8.
  • High-endurance 100 trillion (1014) read/writes.
  • 151-year data retention (see the Data Retention and Endurance table).
  • NoDelay™ writes.
  • Advanced high-reliability ferroelectric process.
  • SRAM and EEPROM compatible.
  • Industry-standard 32 K × 8 SRAM and EEPROM pinout.
  • 70-ns access time, 130-ns cycle time.
  • Superior to battery-backed SRAM modules.
  • No battery concerns.

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Other Datasheets by Cypress (now Infineon)

Part Number Description
FM1808B 256-Kbit (32 K x 8) Bytewide F-RAM Memory
FM16W08 64-Kbit (8 K x 8) Wide Voltage Bytewide F-RAM Memory

Full PDF Text Transcription (Reference)

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FM18W08 256-Kbit (32 K × 8) Wide Voltage Bytewide F-RAM Memory 256-Kbit (32 K × 8) Wide Voltage Bytewide F-RAM Memory Features ■ 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ SRAM and EEPROM compatible ❐ Industry-standard 32 K × 8 SRAM and EEPROM pinout ❐ 70-ns access time, 130-ns cycle time ■ Superior to battery-backed SRAM modules ❐ No battery concerns ❐ Monolithic reliability ❐ True surface mount solution, no rework steps ❐ Superior for moisture, shock, and vibration ❐ Resistant to negative voltage undershoots ■ Low power consumption ❐ Active current 12 mA (max)