FM18W08 Description
FM18W08 256-Kbit (32 K × 8) Wide Voltage Bytewide F-RAM Memory 256-Kbit (32 K × 8) Wide Voltage Bytewide F-RAM Memory.
FM18W08 Key Features
- 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8
- High-endurance 100 trillion (1014) read/writes
- 151-year data retention (see the Data Retention and Endurance table)
- NoDelay™ writes
- Advanced high-reliability ferroelectric process
- SRAM and EEPROM patible
- Industry-standard 32 K × 8 SRAM and EEPROM pinout
- 70-ns access time, 130-ns cycle time
- Superior to battery-backed SRAM modules
- No battery concerns