Datasheet4U Logo Datasheet4U.com

FM24C64B - 64-Kbit (8K x 8) Serial (I2C) F-RAM

General Description

The FM24C64B is a 64-Kbit nonvolatile memory employing an advanced ferroelectric process.

Key Features

  • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8.
  • High-endurance 100 trillion (1014) read/writes.
  • 151-year data retention (See the Data Retention and Endurance table).
  • NoDelay™ writes.
  • Advanced high-reliability ferroelectric process.
  • Fast 2-wire Serial interface (I2C).
  • Up to 1-MHz frequency.
  • Direct hardware replacement for serial (I2C) EEPROM.
  • Supports legacy timings for 100 kHz and 400 kHz.
  • Low power consumption.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FM24C64B 64Kb Serial 5V F-RAM Memory Ramtron
FM24C64 64K-Bit Standard 2-Wire Bus Interface Serial EEPROM Fairchild Semiconductor
FM24C64 64Kb FRAM Serial Memory Ramtron
FM24C64C 64Kb Serial 5V F-RAM Memory Ramtron
FM24C64D 2-Wire Serial EEPROM Fudan

Other Datasheets by Cypress (now Infineon)

Part Number Description
FM24C04B 4-Kbit (512 x 8) Serial (I2C) F-RAM
FM24C16B 16-Kbit (2K x 8) Serial (I2C) F-RAM
FM24CL04B 4-Kbit (512 x 8) Serial (I2C) F-RAM
FM24CL16B 16-Kbit (2K x 8) Serial (I2C) F-RAM
FM24CL64B 64-Kbit (8K x 8) Serial (I2C) F-RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FM24C64B 64-Kbit (8K × 8) Serial (I2C) F-RAM 64-Kbit (8K × 8) Serial (I2C) F-RAM Features ■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Fast 2-wire Serial interface (I2C) ❐ Up to 1-MHz frequency ❐ Direct hardware replacement for serial (I2C) EEPROM ❐ Supports legacy timings for 100 kHz and 400 kHz ■ Low power consumption ❐ 100 A (typ) active current at 100 kHz ❐ 4 A (typ) standby current ■ Voltage operation: VDD = 4.5 V to 5.