FM24C64B
Overview
- 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process
- Fast 2-wire Serial interface (I2C) ❐ Up to 1-MHz frequency ❐ Direct hardware replacement for serial (I2C) EEPROM ❐ Supports legacy timings for 100 kHz and 400 kHz
- Low power consumption ❐ 100 A (typ) active current at 100 kHz ❐ 4 A (typ) standby current
- Voltage operation: VDD = 4.5 V to 5.5 V
- Industrial temperature: -40 °C to +85 °C
- 8-pin small outline integrated circuit (SOIC) package
- Restriction of hazardous substances (RoHS) compliant Functional Description The FM24C64B is a 64-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random
