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FM24V10 - 1-Mbit (128K x 8) Serial (I2C) F-RAM

Key Features

  • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K × 8.
  • High-endurance 100 trillion (1014) read/writes.
  • 151-year data retention (See the Data Retention and Endurance table).
  • NoDelay™ writes.
  • Advanced high-reliability ferroelectric process.
  • Fast two-wire Serial interface (I2C).
  • Up to 3.4-MHz frequency.
  • Direct hardware replacement for serial (I2C) EEPROM.
  • Supports legacy timings for 100 kHz and 400 kHz.
  • Device ID and Ser.

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Other Datasheets by Cypress (now Infineon)

Part Number Description
FM24V01A 128-Kbit (16K x 8) Serial (I2C) F-RAM
FM24V02A 256-Kbit (32K x 8) Serial (I2C) F-RAM
FM24V05 512-Kbit (64 K x 8) Serial (I2C) F-RAM
FM24C04B 4-Kbit (512 x 8) Serial (I2C) F-RAM
FM24C16B 16-Kbit (2K x 8) Serial (I2C) F-RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FM24V10 1-Mbit (128K × 8) Serial (I2C) F-RAM 1-Mbit (128K × 8) Serial (I2C) F-RAM Features ■ 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Fast two-wire Serial interface (I2C) ❐ Up to 3.4-MHz frequency ❐ Direct hardware replacement for serial (I2C) EEPROM ❐ Supports legacy timings for 100 kHz and 400 kHz ■ Device ID and Serial Number ❐ Manufacturer ID and Product ID ❐ Unique Serial Number (FM24VN10) ■ Low power consumption ❐ 175 A active current at 100 kHz ❐ 90 A (typ) standby current ❐ 5 A (typ) sleep mode current ■ Low-voltage operation: VDD = 2.0 V to 3.