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FM24V10 - 1-Mbit (128K x 8) Serial (I2C) F-RAM

Datasheet Summary

Features

  • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K × 8.
  • High-endurance 100 trillion (1014) read/writes.
  • 151-year data retention (See the Data Retention and Endurance table).
  • NoDelay™ writes.
  • Advanced high-reliability ferroelectric process.
  • Fast two-wire Serial interface (I2C).
  • Up to 3.4-MHz frequency.
  • Direct hardware replacement for serial (I2C) EEPROM.
  • Supports legacy timings for 100 kHz and 400 kHz.
  • Device ID and Ser.

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Datasheet preview – FM24V10

Datasheet Details

Part number FM24V10
Manufacturer Cypress Semiconductor
File Size 505.61 KB
Description 1-Mbit (128K x 8) Serial (I2C) F-RAM
Datasheet download datasheet FM24V10 Datasheet
Additional preview pages of the FM24V10 datasheet.

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Full PDF Text Transcription

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FM24V10 1-Mbit (128K × 8) Serial (I2C) F-RAM 1-Mbit (128K × 8) Serial (I2C) F-RAM Features ■ 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Fast two-wire Serial interface (I2C) ❐ Up to 3.4-MHz frequency ❐ Direct hardware replacement for serial (I2C) EEPROM ❐ Supports legacy timings for 100 kHz and 400 kHz ■ Device ID and Serial Number ❐ Manufacturer ID and Product ID ❐ Unique Serial Number (FM24VN10) ■ Low power consumption ❐ 175 A active current at 100 kHz ❐ 90 A (typ) standby current ❐ 5 A (typ) sleep mode current ■ Low-voltage operation: VDD = 2.0 V to 3.
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