FM31L278
Overview
- 64-Kbit/256-Kbit ferroelectric random access memory (F-RAM) ❐ Logically organized as 8K × 8 (FM31L276)/ 32K × 8 (FM31L278) ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See Data Retention and Endurance on page 29) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process
- High Integration Device Replaces Multiple Parts ❐ Serial nonvolatile memory ❐ Real time clock (RTC) ❐ Low voltage reset ❐ Watchdog timer ❐ Early power-fail warning/NMI ❐ Two 16-bit event counter ❐ Serial number with write-lock for security
- Real-time Clock/Calendar ❐ Backup current at 2 V: 1.15 A at +25 °C ❐ Seconds through centuries in BCD format ❐ Tracks leap years through 2099 ❐ Uses standard 32.768 kHz crystal (6 pF/12.5 pF) ❐ Software calibration ❐ Supports battery or capacitor backup
- Processor Companion ❐ Active-low reset output for VDD and watchdog ❐ Programmable low-VDD reset trip point ❐ Manual reset filtered and debounced ❐ Programmable watchdog timer ❐ Dual Battery-backed event counter tracks system intrusions or other events ❐ Comparator for power-fail interrupt ❐ 64-bit programmable serial number with lock
- Fast 2-wire serial interface (I2C) ❐ Up to 1-MHz frequency ❐ Supports legacy timings for 100 kHz and 400 kHz ❐ RTC, Supervisor controlled via I2C interface ❐ Device select pins for up to 4 memory devices
- Low power consumption ❐ 1.5 mA active current at 1 MHz ❐ 120 A standby current
- Operating voltage: VDD = 2.7 V to 3.6 V
- Industrial temperature: -40 °C to +85 °C
- 14-pin small outline integrated circuit (SOIC) package
- Restriction of hazardous substances (RoHS) compliant
