| Part number | GVT71256E18 |
|---|---|
| Datasheet | GVT71256E18_CypressSemiconductor.pdf |
| File Size | 685.75 KB |
| Manufacturer | Cypress (now Infineon) |
| Description | (GVT71256E18 / GVT7C1325A) 256K x 18 Synchronous Flow Through Burst SRAM |
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The Cypress Synchronous Burst SRAM family employs highspeed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Selection Guide 7C1325A-117 71256E18-7 Maximum Access Time (ns) Maximum Operating Current (mA) Maximum CMOS Standby Current (mA) Pentium is a registered trademark of Intel Corporation.
See all Cypress (now Infineon) datasheets
| Part Number | Description |
|---|---|
| GVT71256B36 | (GVT7xxxx) 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM |
| GVT71256C36 | (GVT7xxxx) 256K X 36/512K X 18 Pipelined SRAM |
| GVT71256D36 | (GVT7xxxx) 256K x 36 / 512K x 18 Pipelined SRAM |
| GVT71256T18 | (GVT71256T18 / GVT7C1359A) 256K X 18 Synchronous-pipelined Cache Tag RAM |
| GVT71256ZB36 | (GVT7xxxx) 256K x 36 / 512K x 18 Flow Thru SRAM |
| GVT71256ZC36 | (GVT7xxxx) 256Kx36/512Kx18 Pipelined SRAM With Nobltm Architecture |
| GVT71512B18 | 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM |
| GVT71512C18 | 256K X 36/512K X 18 Pipelined SRAM |
| GVT71512D18 | 256K x 36 / 512K x 18 Pipelined SRAM |
| GVT71512ZB18 | 256K x 36 / 512K x 18 Flow Thru SRAM |
