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GVT7C1325A

Manufacturer: Cypress (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

GVT7C1325A datasheet preview

Datasheet Details

Part number GVT7C1325A
Datasheet GVT7C1325A GVT71256E18 Datasheet (PDF)
File Size 685.75 KB
Manufacturer Cypress (now Infineon)
Description 256K x 18 Synchronous Flow Through Burst SRAM
GVT7C1325A page 2 GVT7C1325A page 3

GVT7C1325A Overview

The Cypress Synchronous Burst SRAM family employs highspeed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Selection Guide 7C1325A-117 71256E18-7 Maximum Access Time (ns) Maximum Operating Current (mA) Maximum CMOS Standby Current (mA) Pentium is a registered trademark of Intel Corporation.

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GVT7C1354A 256Kx36/512Kx18 Pipelined SRAM
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GVT7C1356A 256Kx36/512Kx18 Pipelined SRAM
GVT7C1357A 256K x 36 / 512K x 18 Flow Thru SRAM
GVT7C1359A 256K X 18 Synchronous-pipelined Cache Tag RAM
GVT7C1360A 256K x 36 / 512K x 18 Pipelined SRAM
GVT7C1361A 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM
GVT7C1362A 256K x 36 / 512K x 18 Pipelined SRAM
GVT7C1363A 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM
GVT7C1366A 256K X 36/512K X 18 Pipelined SRAM

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