GVT7C1359A Overview
The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valu.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | GVT7C1359A |
|---|---|
| Datasheet | GVT7C1359A GVT71256T18 Datasheet (PDF) |
| File Size | 283.14 KB |
| Manufacturer | Cypress (now Infineon) |
| Description | 256K X 18 Synchronous-pipelined Cache Tag RAM |
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The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valu.
See all Cypress (now Infineon) datasheets
| Part Number | Description |
|---|---|
| GVT7C1354A | 256Kx36/512Kx18 Pipelined SRAM |
| GVT7C1355A | 256K x 36 / 512K x 18 Flow Thru SRAM |
| GVT7C1356A | 256Kx36/512Kx18 Pipelined SRAM |
| GVT7C1357A | 256K x 36 / 512K x 18 Flow Thru SRAM |
| GVT7C1325A | 256K x 18 Synchronous Flow Through Burst SRAM |
| GVT7C1360A | 256K x 36 / 512K x 18 Pipelined SRAM |
| GVT7C1361A | 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM |
| GVT7C1362A | 256K x 36 / 512K x 18 Pipelined SRAM |
| GVT7C1363A | 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM |
| GVT7C1366A | 256K X 36/512K X 18 Pipelined SRAM |