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S29WS512P - Simultaneous Read/Write Flash

Key Features

  • Single 1.8 V read/program/erase (1.70.
  • 1.95 V).
  • 90 nm MirrorBit™ Technology.
  • Simultaneous Read/Write operation with zero latency.
  • Random page read access mode of 8 words with 20 ns intra page access time.
  • 32 Word / 64 Byte Write Buffer.
  • Sixteen-bank architecture consisting of 32/16/8 Mwords for 512/256/128P, respectively.
  • Four 16 Kword sectors at both top and bottom of memory array.
  • 510/254/126 64Kword sectors (WS512/256/128P).
  • Programmable li.

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📁 Similar Datasheet

Part Number Description Manufacturer
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S29WS-P Burst Simultaneous Read/Write MirrorBit Flash Memory SPANSION
S29WS064J (S29WS064J / S29WS128J) Burst Mode Flash Memory SPANSION

Other Datasheets by Cypress (now Infineon)

Part Number Description
S29WS128P Simultaneous Read/Write Flash
S29WS256P Simultaneous Read/Write Flash
S29AL008D Boot Sector Flash
S29AL008J Boot Sector Flash Memory
S29AL016D Boot Sector Flash

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
S29WS512P S29WS256P S29WS128P 512/256/128 Mb (32/16/8 M x 16 bit), 1.8 V, Simultaneous Read/Write Flash Features  Single 1.8 V read/program/erase (1.70–1.