S29WS512P Description
S29WS512P S29WS256P S29WS128P 512/256/128 Mb (32/16/8 M x 16 bit), 1.8 V, Simultaneous Read/Write.
S29WS512P Key Features
- Single 1.8 V read/program/erase (1.70-1.95 V)
- 90 nm MirrorBit™ Technology
- Simultaneous Read/Write operation with zero latency
- Random page read access mode of 8 words with 20 ns intra page
- 32 Word / 64 Byte Write Buffer
- Four 16 Kword sectors at both top and bottom of memory array
- 510/254/126 64Kword sectors (WS512/256/128P)
- Programmable linear (8/16/32) with or without wrap around and
- 20-year data retention (typical)
- Cycling Endurance: 100,000 cycles per sector (typical)