S70GL02GS
Description
The Cypress S70GL02GS 2-Gigabit MirrorBit® Flash memory device is fabricated on 65 nm MirrorBit Eclipse process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns.
Key Features
- CMOS 3.0 Volt Core with Versatile I/O™
- Two 1024 Megabit (S29GL01GS) in a single 64-ball Fortified-BGA package (see S29GL01GS datasheet for full specifications)
- 65 nm MirrorBit Eclipse™ process technology
- Single supply (VCC) for read / program / erase (2.7V to 3.6V)
- Versatile I/O Feature - Wide I/O voltage (VIO): 1.65V to VCC
- x16 data bus
- 16-word/32-byte page read buffer
- 512-byte Programming Buffer - Programming in Page multiples, up to a maximum of 512 bytes
- Sector Erase - Uniform 128-Kbytes sectors - S70GL02GS: two thousand forty-eight sectors
- Suspend and Resume commands for Program and Erase operations
