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CY7C018 - 64K/128K x 8/9 Dual-Port Static RAM

Download the CY7C018 datasheet PDF. This datasheet also covers the CY7C008 variant, as both devices belong to the same 64k/128k x 8/9 dual-port static ram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • True Dual-Ported memory cells which allow simultaneous access of the same memory location.
  • 64K x 8 organization (CY7C008).
  • 128K x 8 organization (CY7C009).
  • 64K x 9 organization (CY7C018).
  • 128K x 9 organization (CY7C019).
  • 0.35-micron CMOS for optimum speed/power.
  • High-speed access: 12[1]/15/20 ns.
  • Low operating power.
  • Active: ICC = 180 mA (typical).
  • Standby: ISB3 = 0.05 mA (typical) Logic Block Diagram R/.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C008-Cypress.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
CY7C016 (CY7C006 / CY7C016) 16K x 8/9 Dual-Port Static RAM Cypress Semiconductor
CY7C016A (CY7C006A - CY7C017A) Dual Port Static RAM Cypress Semiconductor
CY7C016AV (CY7C006AV - CY7C145AV) Dual Port Static RAM Cypress Semiconductor
CY7C016V (CY7C006V - CY7C139V) Dual Port Static RAM Cypress Semiconductor
CY7C017A (CY7C006A - CY7C017A) Dual Port Static RAM Cypress Semiconductor

Other Datasheets by Cypress (now Infineon)

Part Number Description
CY7C018V 3.3V 64K/128K x 8/9 Dual-Port Static RAM
CY7C019 64K/128K x 8/9 Dual-Port Static RAM
CY7C019V 3.3V 64K/128K x 8/9 Dual-Port Static RAM
CY7C008 64K/128K x 8/9 Dual-Port Static RAM
CY7C008V 3.3V 64K/128K x 8/9 Dual-Port Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
25/0251 CY7C008/009 CY7C018/019 Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 64K x 8 organization (CY7C008) • 128K x 8 organization (CY7C009) • 64K x 9 organization (CY7C018) • 128K x 9 organization (CY7C019) • 0.35-micron CMOS for optimum speed/power • High-speed access: 12[1]/15/20 ns • Low operating power — Active: ICC = 180 mA (typical) — Standby: ISB3 = 0.