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CY7C008V - 3.3V 64K/128K x 8/9 Dual-Port Static RAM

Key Features

  • True Dual-Ported memory cells which allow simultaneous access of the same memory location.
  • 64K x 8 organization (CY7C008).
  • 128K x 8 organization (CY7C009).
  • 64K x 9 organization (CY7C018).
  • 128K x 9 organization (CY7C019).
  • 0.35-micron CMOS for optimum speed/power.
  • High-speed access: 15/20/25 ns.
  • Low operating power.
  • Active: ICC = 115 mA (typical).
  • Standby: ISB3 = 10 µA (typical) Logic Block Diagram R/WL CE.

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Other Datasheets by Cypress (now Infineon)

Part Number Description
CY7C008 64K/128K x 8/9 Dual-Port Static RAM
CY7C009 64K/128K x 8/9 Dual-Port Static RAM
CY7C009V 128K x 8 Dual-Port Static RAM
CY7C018 64K/128K x 8/9 Dual-Port Static RAM
CY7C018V 3.3V 64K/128K x 8/9 Dual-Port Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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25/0251 Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 64K x 8 organization (CY7C008) • 128K x 8 organization (CY7C009) • 64K x 9 organization (CY7C018) • 128K x 9 organization (CY7C019) • 0.35-micron CMOS for optimum speed/power • High-speed access: 15/20/25 ns • Low operating power — Active: ICC = 115 mA (typical) — Standby: ISB3 = 10 µA (typical) Logic Block Diagram R/WL CE0L CE1L OEL CEL CY7C008V/009V CY7C018V/019V 3.