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CY7C009V - 128K x 8 Dual-Port Static RAM

Key Features

  • True dual-ported memory cells which allow simultaneous access of the same memory location.
  • 128K × 8 organization (CY7C009).
  • 0.35-micron CMOS for optimum speed/power.
  • High-speed access: 15/20/25 ns.
  • Low operating power.
  • Active: ICC = 115 mA (typical).
  • Standby: ISB3 = 10 A (typical).
  • Fully asynchronous operation.
  • Automatic power-down.
  • Expandable data bus to 16 bits or more using Master/Slave chip select when using more than one device.
  • On-c.

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Other Datasheets by Cypress (now Infineon)

Part Number Description
CY7C009 64K/128K x 8/9 Dual-Port Static RAM
CY7C008 64K/128K x 8/9 Dual-Port Static RAM
CY7C008V 3.3V 64K/128K x 8/9 Dual-Port Static RAM
CY7C018 64K/128K x 8/9 Dual-Port Static RAM
CY7C018V 3.3V 64K/128K x 8/9 Dual-Port Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY7C008V CY7C018V CY7C009V CY7C019V 3.3 V, 128K × 8 Dual-Port Static RAM CY7C009V 3.3 V, 128K × 8 Dual-Port Static RAM 3.3 V, 128K × 8 Dual-Port Static RAM Features ■ True dual-ported memory cells which allow simultaneous access of the same memory location ■ 128K × 8 organization (CY7C009) ■ 0.