Cypress Semiconductor FM25H20
The FM25H20 is a 2-Mbit nonvolatile memory employing an advanced ferroelectric process. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. Unlike serial flash and EEPROM, the FM25H20 performs write operations at bus speed.| Part No. | FM25H20 |
|---|---|
| Datasheet | FM25H20 Download |
| Manufacturer |  Cypress Semiconductor |
| Description | 2-Mbit Serial (SPI) F-RAM |
| Buy | Stock & Price |
FEATURES
● 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8● High-endurance 100 trillion (1014) read/writes
● 151-year data retention (See the Data Retention and Endurance table)
● NoDelay™ writes
● Advanced high-reliability ferroelectric process
● Very fast serial peripheral interface (SPI)
● Up to 40-MHz frequency
● Direct hardware replacement for serial flash and EEPROM
● Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
● Sophisticated write protection scheme
● Hardware protection using the Write Protect (WP) pin
● Software protection using Write Disable instruction
● Software block protection for 1/4, 1/2, or entire array
● Low power consumption
● 1 mA active current at 1 MHz
● 80 A (typ) standby current
● 3 A sleep mode current
● Low-voltage operation: VDD = 2.7 V to 3.6 V
● Industrial temperature –40 C to +85 C
● Packages
● 8-pin small outline integrated circuit (SOIC) package
● 8-pin thin dual flat no leads (TDFN) package
● Restriction of hazar...
