Cypress Semiconductor FM25L04B
4-Kbit (512 x 8) Serial (SPI) F-RAM
FEATURES
● 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8● High-endurance 100 trillion (1014) read/writes
● 151-year data retention (See the Data Retention and Endurance table)
● NoDelay™ writes
● Advanced high-reliability ferroelectric process
● Very fast serial peripheral interface (SPI)
● Up to 20 MHz frequency
● Direct hardware replacement for serial flash and EEPROM
● Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
● Sophisticated write protection scheme
● Hardware protection using the Write Protect (WP) pin
● Software protection using Write Disable instruction
● Software block protection for 1/4, 1/2, or entire array
● Low power consumption
● 200 A active current at 1 MHz
● 3 A (typ) standby current
● Low-voltage operation: VDD = 2.7 V to 3.6 V
● Industrial temperature: –40 C to +85 C
● Packages
● 8-pin small