FM24CL04B Description
The FM24CL04B is a 4-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the plexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories.
FM24CL04B Key Features
- 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8
- High-endurance 100 trillion (1014) read/writes
- 151-year data retention (See Data Retention and Endurance on page 10)
- NoDelay™ writes
- Advanced high-reliability ferroelectric process
- Fast 2-wire Serial interface (I2C)
- Up to 1-MHz frequency
- Direct hardware replacement for serial (I2C) EEPROM
- Supports legacy timings for 100 kHz and 400 kHz
- Low power consumption